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CXMT Breaks 9,000 MT/s Barrier with DDR5

Дата публикации: 17-08-2026 13:28:09

Chinese memory giant CXMT has finally surpassed 9,000 MT/s on the AMD platform, rivaling DRAM kits from Micron, SK hynix, and Samsung. On the Colorful iGame X870E VULCAN W OC motherboard, an iGame Shadow II 24G×2 kit with 48 GB of memory achieved speeds of 9,000 MT/s. In the provided screenshot, the kit runs at 4,507 MHz, which translates to over 9,014 MT/s, thanks to double data rate technology. Late last year, CXMT announced that its DDR5 could reach 8,000 MT/s, but now we see that overclocked memory can exceed these speeds on the AMD platform.
Additionally, CXMT is working on improving latency. Some Colorful iGame Shadow II 24Gx2 48 GB kits are being tested on ASUS motherboards to achieve ultra-low latency, matching the performance of the top three memory manufacturers. On the latest AMD and Intel platforms, Colorful has tested DDR5 kits running at 6,000 MT with CL30 latency and even some preliminary tests with CL28 latency. This is a promising sign that CXMT memory is finally meeting the standards of competing DRAM from the leading memory makers in both transfer rate and latency. Read full story

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Chinese memory giant CXMT has finally surpassed 9,000 MT/s on the AMD platform, rivaling DRAM kits from Micron, SK hynix, and Samsung. On the Colorful iGame X870E VULCAN W OC motherboard, an iGame Shadow II 24G×2 kit with 48 GB of memory achieved speeds of 9,000 MT/s. In the provided screenshot, the kit runs at 4,507 MHz, which translates to over 9,014 MT/s, thanks to double data rate technology. Late last year, CXMT announced that its DDR5 could reach 8,000 MT/s, but now we see that overclocked memory can exceed these speeds on the AMD platform.

Additionally, CXMT is working on improving latency. Some Colorful iGame Shadow II 24Gx2 48 GB kits are being tested on ASUS motherboards to achieve ultra-low latency, matching the performance of the top three memory manufacturers. On the latest AMD and Intel platforms, Colorful has tested DDR5 kits running at 6,000 MT with CL30 latency and even some preliminary tests with CL28 latency. This is a promising sign that CXMT memory is finally meeting the standards of competing DRAM from the leading memory makers in both transfer rate and latency.

Earlier reports indicate that CXMT uses a 17 nm node for DDR5 chip production and has achieved a 90% yield for these chips. This is only 2-3% lower than Samsung's yield on its 10 nm class node for DDR5 production, suggesting that CXMT's production quality is approaching that of the world's largest memory maker.

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